发明名称 PROCESS FOR THE PREPARATION OF SILICON CARBIDE WHISKER
摘要 The silicon carbide whisker is prepared by (a) mixing silicon dioxide powder and polycrystalline silicon in the molar ratio of 1 to 1.1 by ball milling, (b) molding it and putting the molded body into the alumina boat, (c) covering the body with alumina granules to nucleate and grow SiC whisker on the surfaces of granules, (d) firing the covered body in the tube at 1,500 deg.C for 1 hr and at the atmosphere of argon and hydrocarbon gas such as methane, propane or butane, (e) recovering silicon carbide whisker by ultrasonic vibration.
申请公布号 KR960014907(B1) 申请公布日期 1996.10.21
申请号 KR19930029384 申请日期 1993.12.23
申请人 KOREA ATOMIC ENERGY RESEARCH INSTITUTE 发明人 KANG, DAE-KAP;OH, SUK-JIN;KIM, KYUNG-HO;KIM, SUN-JAE
分类号 C01B31/36;C30B29/62;(IPC1-7):C01B31/36 主分类号 C01B31/36
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