发明名称 |
PROCESS FOR THE PREPARATION OF SILICON CARBIDE WHISKER |
摘要 |
The silicon carbide whisker is prepared by (a) mixing silicon dioxide powder and polycrystalline silicon in the molar ratio of 1 to 1.1 by ball milling, (b) molding it and putting the molded body into the alumina boat, (c) covering the body with alumina granules to nucleate and grow SiC whisker on the surfaces of granules, (d) firing the covered body in the tube at 1,500 deg.C for 1 hr and at the atmosphere of argon and hydrocarbon gas such as methane, propane or butane, (e) recovering silicon carbide whisker by ultrasonic vibration.
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申请公布号 |
KR960014907(B1) |
申请公布日期 |
1996.10.21 |
申请号 |
KR19930029384 |
申请日期 |
1993.12.23 |
申请人 |
KOREA ATOMIC ENERGY RESEARCH INSTITUTE |
发明人 |
KANG, DAE-KAP;OH, SUK-JIN;KIM, KYUNG-HO;KIM, SUN-JAE |
分类号 |
C01B31/36;C30B29/62;(IPC1-7):C01B31/36 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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