Transistor à effet de champ à grille isolée, et procédé de fabrication correspondant.,申请号FR19940006079-传众专利搜索

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发明名称	Transistor à effet de champ à grille isolée, et procédé de fabrication correspondant.
摘要
申请公布号	FR2720191(B1)	申请公布日期	1996.10.18
申请号	FR19940006079	申请日期	1994.05.18
申请人	HAOND MICHEL	发明人	HAOND MICHEL
分类号	H01L21/308;H01L21/335;H01L21/336;H01L29/08;H01L29/417;H01L29/423;(IPC1-7):H01L29/78	主分类号	H01L21/308
代理机构		代理人
主权项
地址

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