| 摘要 |
<p>PURPOSE: To obtain a semiconductor device for restoring a crack due to thermal stress generated at the joint part between the semiconductor chip of the semiconductor device and a base. CONSTITUTION: A semiconductor chip 1 is joined to a base 2 by a joint metal 7 whose melt point is less than 183 deg.C and the semiconductor chip 1 is sealed along with at least either of an inactive gas 8 and a reducing substance 9.</p> |
