SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, MANUFACTURE THEREOF AND SEMICONDUCTOR WAFER

摘要

PURPOSE: To reduce the manufacturing cost of a multichip module having a decoupling capacitor formed on a silicon base whereon a semiconductor chip is mounted. CONSTITUTION: A multichip module having a silicon base 1 and a decoupling capacitor which is constructed of a dielectric film 2 on the silicon base 1 and of an Al electrode 4 on the dielectric film 2. The resistivity of the silicon base 1 is about 10-20mΩ-cm and an N semiconductor layer being of the same conductivity type as the silicon base 1 and having higher impurity concentration than the silicon base 1 is formed on the surface of the silicon base 1, while a low- resistance metal layer 19 is formed on the rear of the silicon base 1. The dielectric film 2 is constituted of a three-layer film of a silicon oxide film, a silicon nitride film and the silicon oxide film.