| 摘要 |
PURPOSE: To provide a method for producing a crystal or a thin film by which effective utilization of a raw material gas, a higher growth rate, miniaturization and simplification of a reactional apparatus, energy saving, etc., can be realized and the vapor reaction is used by adopting a direct heating method for a wafer according to high-frequency induction. CONSTITUTION: A high-frequency coil or conductor 1 having a coil surface, installed oppositely to a solid substrate 8 and constituting a planar induction electric field connected to gas blowoff ports 7 is arranged to carry out the induction heating with the high-frequency coil 1 for the solid substrate 8. A raw material gas 5 is further fed from the gas blowoff ports 7 on the surface of the solid substrate 8. A component element of a compound is continuously deposited and grown on the surface of the solid substrate 8 to produce a thin film of a polycrystal or a single crystal on the surface of the solid substrate 8. The high-frequency coil or conductor is constituted of gold, silver, copper or aluminum or its plating, etc., and the coil or conductor surface on the side having the gas blowoff ports is a mirror surface. |
