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发明名称
METHOD FOR HEAT-TREATING SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
JPH08236467(A)
申请公布日期
1996.09.13
申请号
JP19950061903
申请日期
1995.02.24
申请人
SUMITOMO SITIX CORP
发明人
ADACHI HISASHI
分类号
C30B33/02;H01L21/22;H01L21/324;(IPC1-7):H01L21/22
主分类号
C30B33/02
代理机构
代理人
主权项
地址
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