| 摘要 |
PURPOSE: To provide a method by which a p-n junction element which can prevent the occurrence of short circuit between an electrode electrically connected to an impurity-diffused area and the substrate of a nondiffused area and has an interlayer insulating structure. CONSTITUTION: An Al2 O3 diffusion mask 18 and diffusing source are successively formed on a GaAsP substrate 10. The diffusing source is composed of a mixed film of ZnO and SiO2 . Then, after an impurity-diffused area is formed by thermally diffusing the Zn contained in the diffusing source in the substrate 10, the diffusing source is etched off with a buffered hydrofluoric acid. After removing the diffusing source, an SiN interlayer insulating film 26 is formed on the mask 18 and a window 28 which is designed to a shape and size which are smaller than those of the window 16 of the mask 18 is formed through the film 16. |
