| 摘要 |
PURPOSE: To make a current flow through a lateral voltage drive semiconductor device from zero volt as well as to contrive a reduction of on-resistance of the device by a method wherein carrier injected regions are provided in parallel to a p-type body and alternately with n<+> drains, and control electrodes are connected with the carrier injected regions. CONSTITUTION: n<+> drains 4 and p-type bases 5 are arranged in parallel to a p-type body 2 and in roughly a straight line manner in the depth direction of a segment and at the same time, a plurality of pieces of the drains 4 and the bases 5 are alternately arranged. A voltage higher than that of a source electrode 6 is applied to drain electrodes 8 and a voltage higher than a diffusion potential in the p-n injections between an n-type drain 3 and the bases 5 is applied to base electrodes 9 connected with carrier injected regions. Thereby, holes are uniformly injected in a main electronic current from the bases 5 in the depth direction of the segment. Moreover, the holes injected from the bases 5 are effectively injected in the main electronic current. As a result, a conductivity modulation is accelerated in drain regions in the whole depth direction and an on resistance of a lateral voltage drive type semiconductor device can be reduced. |
