| 摘要 |
<p>PURPOSE:To suppress the occurrence of variations in varistor voltage, and to improve surge resistance by a method wherein non-linear voltage is obtained by the Schottky barrier on the interface of a semiconductor ceramic layer and a common electrode, a through electrode and a non-connection type inner electrode. CONSTITUTION:A common electrode 16 is formed on the upper surface of a ceramic green sheet 14 by printing conductive paste between edges 14a and 14b, and a plurality of non-connection type inner electrodes 17 to 19 are formed on a sheet 13 using conductive paste. Besides, a plurality of through electrodes 20 to 22 are formed on the upper surface of a sheet 12 in the length ranging from the edge 12a to the edge 12b, and the non-connection type inner electrodes 17 to 19 are formed on the position overlapping with the through electrodes 20 to 22 through the sheet 12. Also, the thicknesses of the sheets 12 and 13 are so controlled that the minimum value of the semiconductor grain boundary number of a semiconductor ceramic layer after sintering is 2 or smaller. Then, first, second, third and fourth outer electrodes 23a, 24b, 24c, 24e and 24f to 24h are formed on the side face of a sintered body 23.</p> |
