QUARTZ CRUCIBLE FOR PRODUCTION OF SILICON SINGLE CRYSTAL

摘要

PURPOSE: To obtain a quartz crucible having a uniform surface layer slightly reactive with molten silicon and carbon and capable of growing a silicon single crystal having a reduced impurity content and almost free from defects such as distortion. CONSTITUTION: This quartz crucible has an oxynitride-contg. surface layer. The thickness of the surface layer is preferably about 10μm from the surface and the surface layer is preferably formed by subjecting a part of a quartz crucible close to the surface to oxynitriding treatment by bringing the surface of the crucible into contact with gaseous ammonia under heating at 700-1,200 deg.C in the presence of a carbon generating source.