| 摘要 |
<p>PURPOSE: To form selectively thin film transistors, which respectively have characteristics different from each other, on the same substrate. CONSTITUTION: One part of the region of a layer under a nickel element- containing oxide film 105 is crystallized by performing a heat treatment to be formed into a crystalline silicon film 106 and the remaining part, which is removed with the film 105 from its upper part of the region is left as it is an amorphous silicon film 107 without being crystallized. Moreover, when it is irradiated with a laser beam, the laser beam is attenuated by the film 105, the film 106 is irradiated with the laser beam at an energy density which is required to the film 106, and the crystallizability of the film 106 is furthered. On the other hand, the film 107 is irradiated with the laser beam directly and crystallized. As a result, two kinds of crystalline silicon films 106 and 108 in different crystallizing processes are formed.</p> |
