| 发明名称 |
Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine |
| 摘要 |
The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is within the range of 200-250 nm.
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| 申请公布号 |
US5547897(A) |
申请公布日期 |
1996.08.20 |
| 申请号 |
US19940259944 |
申请日期 |
1994.06.15 |
| 申请人 |
PHILIPS ELECTRONICS NORTH AMERICA CORPORATION |
发明人 |
TASKAR, NIKHIL R.;GALLAGHER, DENNIS;DORMAN, DONALD R. |
| 分类号 |
C30B29/48;C23C16/18;C30B25/02;C30B25/10;H01L21/205;H01L21/365;(IPC1-7):H01L21/22 |
主分类号 |
C30B29/48 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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