发明名称 |
Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates |
摘要 |
Silicon-based laser diodes, optical amplifiers, electrooptical modulators, and photodetectors in which the active region consists of a pseudomorphic GeSn multiple quantum well stack. Each quantum well is tensile-strained Ge1-xSnx layer sandwiched between compressively strained barriers of Ge1-ySny with x DIFFERENCE 0.1, x<y and y DIFFERENCE 0.15. The GeSn quantum wells have a strain-induced direct gap for strongly allowed band-to-band transitions in the infrared range. The quantum well stack is grown upon a relaxed SiGeSn alloy buffer portion whose composition is graded up from a lattice match at the silicon substrate interface to a Ge or GeSn composition at buffer's top surface. Doped cladding layers are added, so that the devices have a p-i-n diode structure. The monolithic integrated Column IV devices have a rib waveguide structure, where desired, and operate typically in the 2 to 3 micron wavelength range.
|
申请公布号 |
US5548128(A) |
申请公布日期 |
1996.08.20 |
申请号 |
US19940355464 |
申请日期 |
1994.12.14 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
SOREF, RICHARD A.;FRIEDMAN, LIONEL |
分类号 |
H01L29/15;H01L31/0352;H01L31/105;H01L33/06;H01S5/02;H01S5/34;(IPC1-7):H01L29/06;H01L33/00;H01L31/032;H01L31/117 |
主分类号 |
H01L29/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|