| 摘要 |
PURPOSE: To provide an IIL semiconductor device by which the current amplification factorβof reverse NPN transistor and current transport factorαof lateral PNP transistor can be both improved. CONSTITUTION: An IIL semiconductor device is combined with a lateral PNP transistor and reverse NPN transistor, and the impurity concentration of an N-counter doped layer as base area for the lateral PNP transistor is made lower than those of an N-well layer 4 and N<+> isolation layer 5 as emitter area for the reverse NPN transistor.
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