发明名称 ETCHING METHOD, MANUFACTURING METHOD FOR PHOTOVOLTAIC DEVICE, AND PHOTOVOLTAIC DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide an etching method by which the short-circuitting part of electrodes with each other is removed, the manufacturing method of a photovoltaic device in which the short-circuit of a photovoltaic element is prevented by using the etching method, and to provide the photovoltaic device. SOLUTION: A metal electrode film 4, short-circuited by a transparent conductive film 2 by the short-circuitting part 4a and a voltage application part 7 are immersed in an electrolytic solution 8, and a voltage is applied to the voltage application part 7 and the electrolytic solution 8 by using a power source 92, so as to dissolve a metal which constitutes the short-circuit part 4a and remove the short-circuit part 4a.</p>
申请公布号 JP2002261307(A) 申请公布日期 2002.09.13
申请号 JP20010055924 申请日期 2001.02.28
申请人 SANYO ELECTRIC CO LTD 发明人 YAMAMOTO KEISHO;TERAKAWA AKIRA
分类号 C25F3/02;H01L21/3063;H01L31/04;(IPC1-7):H01L31/04;H01L21/306 主分类号 C25F3/02
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