发明名称 |
Method of forming low resistance contacts at the junction between regions having different conductivity types |
摘要 |
A thin film transistor structure having a first and a second polycrystalline silicon layer of different conductivity types (P and N) has a high resistance contact at the resultant P-N junction. This contact resistance is reduced by forming TiSi2 (titanium disilicide) or other refractory metal silicides such as cobalt or molybdenum in specific regions, namely the P-N junction contact. Titanium disilicide consumes the portion of the second polycrystalline silicon layer in the P-N contact junction and at the same time consumes a small portion of the underlying first polycrystalline silicon layer, such that the high resistance P-N junction now no longer exists.
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申请公布号 |
US5541455(A) |
申请公布日期 |
1996.07.30 |
申请号 |
US19950393709 |
申请日期 |
1995.02.24 |
申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
HODGES, ROBERT L. |
分类号 |
H01L21/28;H01L21/285;H01L21/768;H01L21/8244;H01L27/11;H01L29/78;H01L29/786;(IPC1-7):H01L29/76;H01L29/94;H01L23/48;H01L23/52 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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