| 摘要 |
<p>PURPOSE: To obtain a semiconductor device capable of coping with an imperfect dielectric strength between a gate electrode and a main electrode by a method wherein a contact hole between a gate pad electrode and a second gate wiring of a defective unit where a dielectric strength is not enough between a gate electrode and a main electrode is filled with insulating material, and a contact hole between interconnections which cause a short circuit between a gate electrode and a source electrode is filled with wiring material. CONSTITUTION: A polycrystalline silicon layer 8 which forms a gate electrode is divided into eight pieces, a gate pad 9 is provided, and a gate wiring 16 is made to extend over an oxide film 7 passing through the gap between two split source electrodes 8 from the gate pad 9. A contact hole 22 is bored spreading over the two-split source electrode 8 and also the gate wiring 16. A short-circuit wiring 27 is capable of coming into contact with the source electrode 8 and the gate wiring 16 at the contact hole 22. When a gate electrode 6 is imperfect in dielectric strength between G and S, polyimide liquid is made to drip in the contact hole 21 with a dispenser or the like to cover all the contact hole 21. By this setup, the contact hole 21 over the gate electrode 6 of a defective unit imperfect in dielectric strength between G and S is stopped up.</p> |
