Method of chemical mechanical polishing planarization of an insulating film using an etching stop

摘要

A method of planarizing an insuating film includes the steps of preparing a semiconductor substrate; treating an uneven surface of the substrate with an organic solvent; forming an insulating film on the thus-treated surface of the substrate by a chemical vapor deposition using an organic silicon compound as a raw material or depositing SOG, forming an etching stop film having a chemical mechanical polishing etching speed slower than that of the insulating film by depositing silicon oxide or silicon oxynitride by performing a chemical vapor deposition using an inorganic silicon compound as a raw material; and etching back at least a part of the insulating film formed on the uneven surface of the substrate by a chemical mechanical polishing process using the etching stop film.