发明名称 Method for filing substrate recesses using elevated temperature and pressure
摘要 To fill a hole or trench structure in an article, such as a semiconductor wafer, a layer is formed on the article. The layer extends over the structure so as to seal the mouth thereof. Then, the wafer and layer are subject to elevated pressure and elevated temperature such as to cause material of the layer to flow into the structure.
申请公布号 US5527561(A) 申请公布日期 1996.06.18
申请号 US19940291575 申请日期 1994.08.16
申请人 ELECTROTECH LIMITED 发明人 DOBSON, CHRISTOPHER D.
分类号 H01L21/00;H01L21/3105;H01L21/321;H01L21/768;H05K3/40;(IPC1-7):B05D3/02 主分类号 H01L21/00
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