MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

The manufacturing method for MOSFET, which has improved properties of a gate oxide film of a transistor, comprises (A) forming a field oxide film on a silicon substrate, (B) growing an sacrificial oxide film upto 1,000Ang. thickness by dry- and wet-oxidation process at 900 deg.C for 40-50 minutes or 1,050 deg.C for 7-8 minutes and removing it, and (C) forming a gate oxide film and a gate electrode film by turns. The obtained gate oxide film has improved breakdown voltage, good reliability and long life time.