| 摘要 |
PURPOSE: To obtain a method for recording information which can record in high density by using a light source such as a semiconductor laser, etc., of a long wavelength by forming a small-sized crescent recording mark. CONSTITUTION: After the intensity of a laser beam is switched to the pulse state of the intensity p2 for raising a recording layer to a melting point or higher, it is switched at the timing for partly superposing the emitted area 2 by the intensity p1 of the layer at the intensity p1 for reading the layer to the crystallization temperature to the melting point with the emitting area 1 by the intensity p2. Thus, the part superposed with the area 1 of the layer of the area 1 which once becomes an amorphous state again becomes a crystalline state, and a recording mark 3 made of smaller crescent amorphous area than the area 1 is formed. The mark 3, a substantially circular recording mark 4 and an elliptical recording mark 5 are combined to shorten the mark interval or to reduce the shortest mark in a ternary recording or the mark length recording. As a result, high-density information recording can be performed while using the light source such as the long wavelength semiconductor laser, etc. |
