| 摘要 |
PURPOSE: To suppress the ridge of the surface of a semiconductor film by irradiating with a laser beam in vacuum of a specific value or less, and then irradiating with a laser beam of the energy density of a specific value. CONSTITUTION: A substrate is set on a driver 40 in a chamber 42, and the chamber 42 is set to a vacuum state of 100Pa or less. The substrate is heated, and irradiated by first laser beam in this state. Thereafter, it is irradiated with second laser beam. The laser uses the same KrF excimer laser as the first time, and the energy density is set to 1.3 times as large as the first laser, and the other conditions are the same. |
