| 发明名称 |
Substrate used in mfr. of electrical integrated circuits |
| 摘要 |
Substrate comprises a layer (5) of aluminium nitride with an intermediate or auxiliary layer (6, 6b) on at least one side contg. Al2O3. Layer (5) has a thickness of 0.5-10 mu m. The novelty is that the intermediate layer additionally contains 0.1-40 mol.% XiO2, an oxide of gp. IVb metal, manganese oxide, or Y2O3. Prodn. of the substrate is also claimed.
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| 申请公布号 |
DE4444681(A1) |
申请公布日期 |
1996.05.30 |
| 申请号 |
DE19944444681 |
申请日期 |
1994.12.15 |
| 申请人 |
SCHULZ-HARDER, JUERGEN, DR.-ING., 91207 LAUF, DE |
发明人 |
SCHULZ-HARDER, JUERGEN, DR.-ING., 91207 LAUF, DE |
| 分类号 |
C04B41/52;C04B41/89;(IPC1-7):C04B41/87;C04B41/88;C04B35/582;H01L23/15;C04B41/90 |
主分类号 |
C04B41/52 |
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