发明名称 |
Method and apparatus for forming deposited film. |
摘要 |
A plasma CVD method adapted to a roll-to-roll type or the like arranged such that the change rate of the temperature of the substrate before and after an i-type semiconductor layer is deposited is made rapid so as to prevent diffusion of impurities occurring due to annealing by constituting the structure in such a manner that the deposited film is formed on the substrate by the plasma CVD method while heating the elongated substrate moving in an i-layer discharging chamber at a rate of 4 DEG C/second or higher immediately in front of an inlet of the discharging chamber and cooling the same at a rate of 4 DEG C/second or higher immediately in the rear of an outlet of the discharging chamber so that a stacked-type photovoltaic device having a large area and free from scattering of the characteristics is continuously formed without deterioration of the characteristics occurring due to dispersion. <IMAGE> |
申请公布号 |
EP0661760(A3) |
申请公布日期 |
1996.05.15 |
申请号 |
EP19940309853 |
申请日期 |
1994.12.28 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MATSUDA, KOICHI;KONDO, TAKAHARU;MIYAMOTO, YUSUKE |
分类号 |
G02F1/1343;C23C16/46;C23C16/50;C23C16/54;H01L21/205;H01L21/26;H01L21/31;H01L31/04;H01L31/075;H01L31/20 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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