发明名称 PROCESSING METHOD OF RESIDUE CONTAINING VANADIUM
摘要 <p>The starting material is a vanadium-containing residue which, calculated on anhydrous basis, is composed of at least 5 percent by weight of carbon. In an oven, the residue a) is thermally treated at temperatures of 400 DEG C to 700 DEG C under an oxidising atmosphere at an O2 partial pressure, measured within the region occupied by the residue, of at least 10-4 bar and/or b) is thermally treated at temperatures of 500 DEG C to 1300 DEG C at an O2 partial pressure, measured within the region occupied by the residue, of at most 10exp(-2) bar. From the oven is withdrawn a solids mixture which is composed of at least 5 percent by weight of vanadium oxide.</p>
申请公布号 SK287792(A3) 申请公布日期 1996.05.08
申请号 SK19920002877 申请日期 1992.09.18
申请人 METALLGESELLSCHAFT AG 发明人 SAMANT GURUDAS;HIGMAN CHRISTOPHER;KRISHNAN VENKITA;STURM PETER
分类号 C01G31/02;C22B34/22;(IPC1-7):C22B34/22 主分类号 C01G31/02
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