ELECTRODE OF SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: To restrain the Id drift phenomenon in a GaAs MESFET provided with a gate electrode having a high melting point metal layer. CONSTITUTION: In a gate electrode 4, an oxygen absorbing layer 7 of 1-20μm in thickness which is composed of Ti or TiN or Ni is formed between an N-type GaAs layer 2 and a WSi layer 4a as a high melting point metal layer. A thermally stable junction is formed between the gate electrode 4 and the N-type GaAs layer 2. Oxygen is taken in the oxygen absorbing layer 7 from an interface modified layer composed of a GaAs natural oxide film 8 existing on the interface of the gate electrode 4 and the N-type GaAs layer 2. Thereby the formation of interfacial level caused by oxygen in the interface modified layer is restrained, and the Id drift phenomenon is remarkably restrained.