| 摘要 |
<p>PURPOSE: To improve the throughput of vapor deposition by placing silicon substrates and a silicon plate opposite each other with a small gap in-between in a reaction chamber, keeping the silicon plate at a temperature higher by a specific range of values than the temperature of the silicon substrates, using an halogen gas atmosphere for the chamber, and thus epitaxially growing silicon crystals on the silicon substrates. CONSTITUTION: Silicon substrates 11 are placed on a susceptor 10, which is in turn fed into a reaction chamber 3. The silicon substrates 11 are heated to 1100-1280 deg.C by means of an infrared heater 14, and are conveyed to the specified position direct under a silicon plate 12. The silicon plate 12 has been heated to a temperature higher by 10-120 deg.C than the temperature of the silicon substrates 12 by means of a high-frequency coil 13. The system uses a halogen gas atmosphere. The gap between the silicon substrates 11 and the silicon plate 12 is controlled to approx. 20-100μm. When halogen gas is introduced into the chamber, the surface of the silicon plate 12 is etched and a silicon epitaxial growth layer is formed on the surface of the silicon substrates 11. This reduces time required for gas substitution, and thus improves throughput.</p> |
