| 摘要 |
PURPOSE: To increase capacitor capacitance without augmenting the aspect ratio of a trench, and to reduce the aspect ratio of the trench. CONSTITUTION: In the manufacture of a semiconductor device with a trench capacitor, a phosphorus-doped polycrystalline silicon film 36 is deposited on a part of the internal surface of a trench to made in wells 11, 12 in a substrate through an oxide film 35, and phosphorus is diffused to the substrate side from the polycrystalline silicon film 36 through heat treatment while the oxide film 35 is agglomerated. The polycrystalline silicon film 36 and the oxide film 35 in the trench and a substrate surface are etched through isotropic etching, and a storage electrode is deposited on the internal surface of the trench through a capacitor insulating film. |
