发明名称 Verfahren zum Versiegeln einer elektrischen Verbindung in einer Halbleiteranordnung
摘要 A method of hermetically sealing an electrical feedthrough (5) in a semiconductor-on-insulator device comprising the steps of producing an electrically insulating layer (2) on a semiconductive material (1) having a first surface area, producing one or more electrodes (4) on a non-conductive substrate (3) of a second surface area which may be greater than the first surface area, with each electrode having an electrical feedthrough (5) associated therewith, placing the semiconductive layer on the substrate with the insulating layer in contact with the substrate and such that each electrical feedthrough extends beyond the edge of the semiconductive layer, and bonding the semiconductive layer to the substrate to provide an hermetic seal around the feedthrough and thus protect the integrity of the electrode associated therewith and disposed between the semiconductive layer and the substrate.
申请公布号 DE3854982(D1) 申请公布日期 1996.03.21
申请号 DE19883854982 申请日期 1988.07.27
申请人 UNITED TECHNOLOGIES CORP., HARTFORD, CONN., US 发明人 CHEN, FRANK, SWINDON WILTSHIRE SN3 1ND, GB;ROGERS, TONY WILLIAM, STOKE POGES BUCKINGHAMSHIRE, GB;BLACKABY, DAVID EDWARD, WEST SUFFIELD CONNECTICUT 06093, US
分类号 B81B7/00;G01L9/00;H01L21/58 主分类号 B81B7/00
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