发明名称 Plasma reactor
摘要 <p>The disclosure relates to a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing (10), a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line (15), from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle (25) facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member (20a) surrounded by at least one annular member (35a) with a gap (25) therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus. &lt;IMAGE&gt;</p>
申请公布号 EP0702392(A2) 申请公布日期 1996.03.20
申请号 EP19950305793 申请日期 1995.08.18
申请人 APPLIED MATERIALS, INC. 发明人 MAYDAN, DAN;MAK, STEVE S.Y.;OLGADO, DONALD;YIN, GERALD Z.;DRISCOLL, TIMOTHY D.;SHIEH, BRIAN;PAPANU, JAMES S.
分类号 H01L21/3065;H05H1/46;C23C16/44;C23C16/455;C23F4/00;H01J37/32;H01L21/302;(IPC1-7):H01J37/32 主分类号 H01L21/3065
代理机构 代理人
主权项
地址