发明名称 POSITIVE RESIST COMPOSITION FOR LIFT-OFF METHOD AND PATTERN FORMING METHOD
摘要 PURPOSE: To provide a resist compsn. capable of forming a resist pattern ensuring high working precision and high reliability by a lift-off method and to provide a pattern forming method. CONSTITUTION: A positive resist compsn. contg. novolak resin having repeating units represented by formula I as an alkali-soluble resin, a low nuclear body represented by formula II or III and having phenolic hydroxyl groups and 2-5 benzene rings as a dissolution inhibitor and a compd. having a 1,2- naphthoquinonediazido group represented by formula IV or V as a photosensitive agent is exposed and developed to form a resist pattern of a prescribed shape. In the formulae II, III, (i) is 1 or 2, each of (k), (m) and (p) is an integer of 0 to 3, (n) is an integer of 1 to 4, (q) is an integer of 1 to 3, (r) is 2 or 3, m+p+n<=6 and k+q<=5.
申请公布号 JPH0869111(A) 申请公布日期 1996.03.12
申请号 JP19950169299 申请日期 1995.06.12
申请人 SHIN ETSU CHEM CO LTD 发明人 OKAZAKI SATOSHI;NISHIKAWA KAZUHIRO;KOBAYASHI MASARU;KOBAYASHI YOSHITAKA;UMEMURA MITSUO;ISHIHARA TOSHINOBU
分类号 G03F7/004;G03F7/022;G03F7/023;G03F7/26;H01L21/027;H01L21/3205;(IPC1-7):G03F7/023;H01L21/320 主分类号 G03F7/004
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