| 摘要 |
<p>PURPOSE:To provide a TFT, where a TFT element and a transparent electrode (picture element electrode) such as an IT0, etc., are combined and the formation efficiency of a transparent electrode or electric property are improved, and its manufacturing method. CONSTITUTION:This film transistor is made by pretreating the surface of a gate insulating film 13 by hydric plasma, and forming a semiconductor film 16 on the treated surface 15, and also, pretreating the surface of the semiconductor film 16 likewise with hydric plasma, and stacking a transparent electrode 20 on the treated face 18 and patterning it, and then, connecting a source electrode 22 to the transparent electrode 20.</p> |
