发明名称 Conductive via structure for integrated circuits and method for making same
摘要 A conductive via structure establishes an electrical interconnection between two conductive layers in a semiconductor structure by connecting a first conductive layer on a semiconductor substrate to a second conductive layer by means of a conductive via structure extending through a non-conductive layer separating the two conductive layers. The non-conductive layer preferably includes a layer of spin-on-glass (SOG), and is provided with a via aperture therethrough. A conductive spacer, preferably of TiW, is fabricated within the via aperture in abutment with the walls of the via aperture. A second conductive layer is fabricated over the non-conductive layer, the conductive spacer, and within the via aperture, to establish the completed electrical interconnection. The via structure reduces out-gassing and chipping from the SOG layer, yet provides a low electrical resistance path between the two conductive layers.
申请公布号 US5493152(A) 申请公布日期 1996.02.20
申请号 US19940335306 申请日期 1994.11.07
申请人 VLSI TECHNOLOGY, INC. 发明人 CHANG, KUANG-YEH
分类号 H01L23/522;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/522
代理机构 代理人
主权项
地址
您可能感兴趣的专利