HIGH-SPEED LSI SEMICONDUCTOR DEVICE USING DUMMY LEAD AND ITSRELIABILITY IMPROVEMENT METHOD

摘要

PURPOSE: To provide a semiconductor having a metal lead with progressive reliability. CONSTITUTION: The semiconductor contains a metal lead 14 on a substrate 12, materials of low permittivity at least between the metal leads 14, and a dummy lead 16 closely adjacent to the metal lead 14. The heat from the metal lead 14 can be conducted to the dummy lead 16 and the heat can be dissepated from the dummy lead 16. The material of low permittivity has lower value than 3.5.