| 摘要 |
PURPOSE: To reduce the leakage current and to improve the yield, by forming a first crystal ferroelectric thin film, stacking a second ferromagnetic thin film which is considerably thin compared to the first film, and burying them in cavity parts formed between crystal particles. CONSTITUTION: A method for restoring defects by cavities in a (Ba, Sr) TiO3 (BST) film 4 as a first crystal ferroelectric thin film by stacking a SrTiO3 (STO) film 5 as a second ferroelectric thin film is provided. Namely, the stack structure of the BST film 4 and the amorphous STO film 5 thinner than the film 4 is contained. Consequently, insulating ability between the capacitor of DRAM and the like and upper/lower electrodes (Pt) 3 becomes superior and an initial short-circuiting defect can be reduced while leakage current is suppressed. Besides, effect can be improved by crystallizing the amorphous STO film 5. |
