Semiconductor substrate with buried dielectric diamond layer

摘要

The substrate has a layer structure with a disc (1) of a high temp. resistant material, a structured diamond layer (4), a layer of a bonding material (6) and a second disc (9) for integration of power semiconductor components. The diamond layer is deposited on the surface of the first disc so that an edge zone remains uncoated, with a protective layer for preventing oxidation enclosing the diamond layer. Pref. the first disc is provided by a silicon wafer, the bonding material provided by a polysilicon, metal silicide, silicon dioxide, or silicon nitride layer.