Elementisolationsaufbau einer Halbleitereinrichtung und Verfahren zur Herstellung derselben,申请号DE19914116690-传众专利搜索

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发明名称	Elementisolationsaufbau einer Halbleitereinrichtung und Verfahren zur Herstellung derselben
摘要
申请公布号	DE4116690(C2)	申请公布日期	1996.01.25
申请号	DE19914116690	申请日期	1991.05.22
申请人	MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP	发明人	NAGATOMO, MASAO, ITAMI, HYOGO, JP;SHIMANO, HIROKI, ITAMI, HYOGO, JP;OKUDAIRA, TOMONORI, ITAMI, HYOGO, JP;OKUMURA, YOSHINORI, ITAMI, HYOGO, JP
分类号	H01L21/265;H01L21/336;H01L21/762;H01L21/765;(IPC1-7):H01L21/761;H01L27/04;H01L21/425	主分类号	H01L21/265
代理机构		代理人
主权项
地址

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