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发明名称
SELECTIVE GROWTH METHOD AND SELECTIVE BURIED GROWTH METHOD OF COMPOUND SEMICONDUCTOR
摘要
申请公布号
JPH0817736(A)
申请公布日期
1996.01.19
申请号
JP19940144276
申请日期
1994.06.27
申请人
NEC CORP
发明人
MATSUMOTO TAKU
分类号
H01L21/205;(IPC1-7):H01L21/205
主分类号
H01L21/205
代理机构
代理人
主权项
地址
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