| 摘要 |
PURPOSE:To obtain a chemical amplification type resist compsn. having high sensitivity and high resolution, capable of forming a resist pattern having satisfactory heat resistance and a good cross-sectional shape, suitable for use as a resist for deep UV or excimer laser light and especially effectively usable for fine working in a process for producing super-LSI. CONSTITUTION:In this resist compsn. contg. a resin component and a compd. which generates an acid when irradiated, the resin component is a mixture of polyhydroxystyrene having tert.-butoxycarbonyloxy groups substd. for 10-60mol% of hydroxyl groups with polyhydroxystyrene having residues substd. for 10-60mol% of hydroxyl groups. The residues are represented by the formula (where R<1> is H or methyl, R<2> is methyl or ethyl and R<3> is lower alkyl). |
