| 摘要 |
A semiconductor memory device as a video memory is disclosed. The video memory includes a first memory cell array plate having a plurality of first pairs of digit lines and a plurality of second pairs of digit lines, a plurality of first sense amplifiers arranged along one side of the first array plate and provided for the first pairs of digit lines, a plurality of second sense amplifiers arranged along an opposite side of the first array plate and provided for the second pairs of digit lines, a second memory cell array plate having a plurality of third pairs of digit lines, and a plurality of third sense amplifier provided for the third pairs of digit lines. A plurality of pairs of dummy digit lines are further provided in the second memory cell array plate so that the first and second cell array plates has the pairs of digit lines equal in number to each other.
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