发明名称 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
摘要 a lower wiring layer formed on a semiconductor substrate; the first interlayer insulating film formed for enveloping the lower wiring layer; the contact part formed on the first interlayer insulating film to expose the part of the lower wiring layer; an upper wiring layer connecting tungsten silycide layer with the contact pad by connecting the lower wiring layer through the first contact part .
申请公布号 KR960000363(B1) 申请公布日期 1996.01.05
申请号 KR19920003408 申请日期 1992.03.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN, BYUNG - TAE;KIM, HAN - SOO;BAE, DONG - JOO
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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