发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF |
摘要 |
a lower wiring layer formed on a semiconductor substrate; the first interlayer insulating film formed for enveloping the lower wiring layer; the contact part formed on the first interlayer insulating film to expose the part of the lower wiring layer; an upper wiring layer connecting tungsten silycide layer with the contact pad by connecting the lower wiring layer through the first contact part .
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申请公布号 |
KR960000363(B1) |
申请公布日期 |
1996.01.05 |
申请号 |
KR19920003408 |
申请日期 |
1992.03.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN, BYUNG - TAE;KIM, HAN - SOO;BAE, DONG - JOO |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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