| 摘要 |
PURPOSE: To simplify a process and reduce a cell size by forming, for example, a gate electrode and a channel region on an insulating substrate so that a one-side wall has a negative inclined surface. CONSTITUTION: Polysilicon 12a for a gate electrode and a first photosensitive film 9 are successively formed on an insulating board 11, the first photosensitive film 9 is removed, and then an insulating film side wall 15 is formed. Then, a second photosensitive film 10 is deposited and the polysilicon 12a is subjected to dry etching, thus forming a gate electrode 12 with a negative inclined surface. Then, the second photosensitive film 10 is removed and a gate insulating film 13 and a semiconductor layer 14 are successively deposited on the entire surface. Then, a p-type impurity with a concentration of 1×10<14> -1×10<16> atoms/cm<2> is implanted by an energy of 5 kev-20 kev or an n-type impurity with a concentration of 1×10<14> -1×10<16> atoms/cm<2> is implanted by an energy of 10 kev-50 kev, thus forming a p-type or an n-type thin-film transistor. |
