发明名称 REMOVING SOLUTION FOR RESIDUE OF RESIST AFTER REMOVAL ON POLYIMIDE RESIN FILM AND PRODUCTION OF PATTERN OF POLYIMIDE RESIN FILM
摘要 PURPOSE:To obtain a removing soln. for removing residue of a resist after removal at the time of patterning polyimide resin by using a specified ether compd. as an essential component. CONSTITUTION:This removing soln. cont.ains an ether compd. represented by the formula R (O-CH2-CH2)nO-R<2> as an essential component. In the formula, each of R<1> and R<2> is H or 1-6C alkyl and (n) is an integer of 1-3. In a process for producing a polyimide resin pattern, a pattern part. 7 is formed in a prescribed part, an Al bonding pad part 8 is exposed and a positive resist layer 5 is removed by treating the substrate 1 with an org solvent. Residue 9 of the resist, on the surface of the resultant pattern of a polyimide resin film is removed by treating the substrate 1 with this removing soln. by dipping, showering, spraying or other method and the objective pattern of the polyimide resin film is obtd.
申请公布号 JPH07311469(A) 申请公布日期 1995.11.28
申请号 JP19940102654 申请日期 1994.05.17
申请人 HITACHI CHEM CO LTD 发明人 TAKIZAWA TOSHIO;YAMAGISHI TOMOAKI
分类号 G03F7/42;C11D7/26;C11D7/34;H01L21/027;H01L21/304;H01L21/308;(IPC1-7):G03F7/42 主分类号 G03F7/42
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