| 发明名称 |
MESAATYPE SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To avoid the deterioration of the element property caused by the adhesion to the copper base via the gold-silicon eutectic alloy, by setting the distance to 10-70mum between the chip edge and the groove edge along the periphery of the semiconductor chip. |
| 申请公布号 |
JPS5432076(A) |
申请公布日期 |
1979.03.09 |
| 申请号 |
JP19770097822 |
申请日期 |
1977.08.17 |
| 申请人 |
HITACHI LTD |
发明人 |
MISAWA YUTAKA;YATSUNO KOUMEI;WAKUI TAKAYUKI;YASUDA YASUMICHI;MOCHIZUKI YASUHIRO |
| 分类号 |
H01L21/52;H01L21/331;H01L29/08;H01L29/72;H01L29/73 |
主分类号 |
H01L21/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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