COMPOUND SEMICONDUCTOR EPITAXIAL GROWTH METHOD

摘要

PURPOSE:To obtain epitaxial films of single-crystal ZnSe and ZnSSe suitable for a light-emitting layer of a high-efficiency light-emitting device and having high quality. CONSTITUTION:A process of compound semiconductor epitaxial growth method comprises a step of heating simple selenium as a molecule source to an adequate temperature by a molecular beam epitaxial method where desired selenium vapor pressure is acquired, a step of further heating the selenium vapor to a temperature higher than the evaporation temperature, and a step of growing a compound semiconductor layers 2 and 4 by employing the resulting selenium molecular beam.