| 摘要 |
PURPOSE:To provide a method for manufacturing a vibration-type semiconductor element with an improved dimensional precision which is formed by performing etching machining of a semiconductor substrate. CONSTITUTION:A first silicon substrate 14 and a second silicon substrate 15 are joined in one piece via a silicon oxidation layer 16, first a step 11 patterned after a groove 13 and a vibration beam 6 for subdividing a fixed electrode part 2 and a movable electrode part 3 is formed at the side of the first silicon substrate 14, the second silicon substrate 15 and further the silicon oxide layer 16 are eliminated for separating the fixed electrode part 2 and the movable electrode part 3 and for manufacturing the title semiconductor element. |
