发明名称 SECONDARY ION MASS SPECTROMETRY
摘要 PURPOSE:To provide a secondary ion mass spectrometry (SIMS, SIRIS) of which detection presicion is prevented from degrading by crater peripheral effect, which utilizes all the sputtered secondary ions obtained from a part with a wide region to which primary ion beam 32 is radiated or all the post- ionized secondary ions, and which can carry out mass spectrometry at high precision. CONSTITUTION:While electron beams 34 to neutralize ionized particles sputtered out of a peripheral region being radiated to the peripheral region of the surface of a specimen 30 to which primary ions are radiated, primary ion beams 32 are radiated to carry out mass spectrometry for ionized particles. Laser beams 36 for post-ionization are radiated to the surface of the specimen 30 from a side to post-ionize the sputtered particles radiated out of the surface of the specimen 30 and then mass spectrometry (SIRIS) may be carried out for the resulting ionized particles ionized by post-ionization.
申请公布号 JPH07280754(A) 申请公布日期 1995.10.27
申请号 JP19940071040 申请日期 1994.04.08
申请人 SONY CORP 发明人 TANIGAKI TAKESHIGE
分类号 G01N23/225 主分类号 G01N23/225
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