发明名称 |
Plasma processing apparatus. |
摘要 |
A plasma processing apparatus has a second electrode set parallel to a first electrode to be set in a deposition chamber capable of being set in an airtight vacuum, and an RF power supply path for applying an RF power having a discharge frequency of 20 MHz to 450 MHz to the second electrode. In the plasma processing apparatus, a high-voltage capacitor having a small capacitance is arranged on the RF power supply path. With this arrangement, the plasma processing apparatus capable of uniformly, stably processing a relative large base with a plasma at a high processing speed is provided. Further, the plasma processing apparatus in which the manufacturing time can be shortened and cost can be decreased is provided. <IMAGE> |
申请公布号 |
EP0678895(A1) |
申请公布日期 |
1995.10.25 |
申请号 |
EP19950105645 |
申请日期 |
1995.04.13 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
UEDA, SHIGENORI, C/O CANON K.K.;HASHIZUME, JUNICHIRO, C/O CANON K.K.;TSUCHIDA, SHINJI, C/O CANON K.K. |
分类号 |
H05H1/46;C23C16/50;H01J37/32 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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