| 摘要 |
PURPOSE:To form an oxide thin film excellent in characteristic and quality at low pressure and low substrate temp. by supplying an oxidizing gas and vapor-deposition component elements into a vacuum chamber wherein a substrate capable of being heated is arranged and irradiating the substrate with UV rays. CONSTITUTION:A substrate 4 placed on a holder 5 contg. a heater 5a is arranged in a vacuum chamber 2 capable of being evacuated to a high vacuum through a main evacuating system 1, and an oxidizing gas contg. O3 and O2 is supplied into the chamber 2 from a feed line 7. The component elements other than oxygen are supplied to the substrate 4 from a K-cell vapor-deposition source 3 opposed to the substrate 4, or the substrate is irradiated with molecular beams from an electron gun 11. Consequently, an oxide thin film is formed on the substrate 4 surface. In this reactive codeposition method, the substrate 4 surface is further irradiated ', with the UV rays of about 150-300nm from a UV source 15, and the film is formed. Consequently, the oxide thin film excellent in surface cleanliness, crystallinity, superconductivity, etc., is obtained without heat-treating the formed film.
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