| 摘要 |
<p>PURPOSE:To prevent occurrence of breakdown caused by a drain of a thin film transistor element by driving in impurities after a mask is formed with a gate electrode covered in a peripheral part corresponding to channel width. CONSTITUTION:After a mask 7A is formed with a gate electrode covered in a peripheral part corresponding to channel in the same mask and process as the mask 7 formed by covering one MOS transistor of complementary MOS transistor in the area other than display area when a source area S and a drain area D of a film transistor element TFT of display area is formed through drive-in of impurities with its gate electrode 5 as a mask, the source area S and drain area D are formed through drive-in of impurities. Therefore, the areas S and Dis given offset structure against the gate electrode 5. Thus, occurrence of breakdown caused by the drain of a film transistor TFT is prevented.</p> |
